SK海力士在OCP全球峰会2026展示下一代AI基础设施愿景：以内存为中心的服务器系统
SK海力士在OCP全球峰会2026（12日至15日于加州圣何塞举行）展示面向服务器的下一代内存解决方案，并提出以CXL池化内存为基础的下一代服务器系统。其CMM-DDR5第二代产品（256GB，基于CXL 3.2）带宽较上一代提升逾一倍至80GB/s，能效提升约30%。SK海力士还与NAVER Cloud等合作，在PoC层面验证了智能体AI环境下的KV缓存共享等方案。
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完整日历自动同步来源动态 · 保留原文出处已收录 6 条 · 页面每分钟更新
SK海力士 · 官方新闻AI 评分4242
SK海力士 · 官方新闻 [Inside the Research] In the AI era, NAND moves beyond storage to computing… 3D FeNAND co-optimization at IEEE
原文摘录：SK hynix offers a full-stack portfolio of AI memory solutions optimized for AI systems across all major memory categories, including High Bandwidth Memory(HBM), DRAM, and NAND flash. To highlight the research that underpins these solutions…
三星电子 · 半导体官方新闻AI 评分4848 三星电子开始量产面向AI应用的PM9E1 PCIe 5.0 SSD
三星电子宣布已开始量产PM9E1，这是一款采用自研5纳米控制器和第八代V-NAND的PCIe 5.0 SSD，顺序读写速度分别达14.5GB/s和13GB/s，较上代提升逾一倍。该产品提供512GB至4TB容量选项，功耗效率提升超50%，并应用SPDM v1.2安全技术。三星计划以PM9E1为起点向全球PC厂商扩展先进SSD供应。
三星电子 · 半导体官方新闻 Samsung Electronics Develops Industry’s First Automotive SSD Based on 8th-Generation V-NAND
原文摘录：Samsung Electronics, the world leader in advanced memory technology, today announced it has successfully developed the industry’s first PCIe 4.0 automotive SSD based on eighth-generation vertical NAND (V-NAND). With industry-leading speeds…
三星电子 · 半导体官方新闻 Samsung Begins Industry’s First Mass Production of QLC 9th-Gen V-NAND for AI Era
原文摘录：Samsung Electronics, the world leader in advanced memory technology, today announced it has begun mass production of its one-terabit (Tb) quad-level cell (QLC) 9th-generation vertical NAND (V-NAND). With the industry’s first mass productio…
三星电子 · 半导体官方新闻 Samsung Electronics Begins Industry’s First Mass Production of 9th-Gen V-NAND
原文摘录：Samsung Electronics, the world leader in advanced memory technology, today announced that it has begun mass production for its one-terabit (Tb) triple-level cell (TLC) 9th-generation vertical NAND (V-NAND), solidifying its leadership in th…
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